Deep level transient spectroscopic study of neutron-irradiated n-type 6H-SiC

摘要

A study of neutron-irradiated n-type 6H-SiC using deep level transient spectroscopy was presented. 100- 1600°C isochronal annealing was performed on the as-irradiated samples with each of the annealing steps to investigate the thermal annealing behavior. Thermal generation of deep levels NE1- NE4 at annealing temperatures above 1400°C was observed.