AC hot-carrier-induced degradation in NMOSFET's with N 2O-based gate dielectrics

摘要

Frequency-dependent ac-stress-induced degradation in NMOSFET's with N 2O-grown and N 2O-nitrided gate oxides was investigated. Suppressed device degradation is observed in both N 2O-based devices as compared to SiO 2 device for frequency up to 100 kHz, which is attributed to nitrogen incorporation in the gate oxides. Moreover, when comparing the two N 2O-based oxides, N 2O-grown oxide device exhibits enhanced degradation than N 2O-nitrided oxide device. Charge pumping measurements reveal that N 2O-nitrided oxide has better immunity to interface-state and neutral-electron-trap generation under dynamic stress.