Suppressed growth of interlayer GeO x in Ge MOS capacitors with gate dielectric prepared in wet NO ambient

摘要

Wet NO oxidation with wet N 2 anneal is used to grow GeON gate dielectric on Ge substrate. As compared to dry NO oxidation, negligible growth of GeO x interlayer and thus a near-perfect GeON dielectric can be obtained by the wet NO oxidation. As a result, MOS capacitors prepared by this method show greatly reduced interface-state and oxide-charge densities and gate leakage current. This should be attributed to the hydrolysable property of GeO x in water-containing atmosphere. © 2005 IEEE.