Real time scatterometry: a new metrology for in situ microelectronics process control

摘要

In situ and real time control of the different process steps in semiconductor device manufacturing becomes a critical challenge, especially for the lithography and plasma etching processes. Real time scatterometry is among the few solutions able to meet the requirement for in line monitoring. In this paper we demonstrate that real time scatterometry can be used as a real time monitoring technique during the resist trimming process. For validation purposes the real time scatterometry measurements are compared with 3D Atomic Force Microscopy measurements made in the same process conditions. The agreement between both is excellent.