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Electro-optic properties of GaInAsSb/GaAs quantum well for high-speed integrated optoelectronic devices

机译：用于高速集成光电器件的GaInassb / Gaas量子阱的电光特性

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Thoma Jiri; Liang Baolai; Reyner Charles; Ochalski Tomasz J.; Williams David P.; Hegarty Stephen P.; Huffaker Diana L.; Huyet Guillaume;
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1. Electro-optic properties of GaInAsSb/GaAs quantum well for high-speed integrated optoelectronic devices [J] . Thoma Jiri, Liang Baolai, Reyner Charles, Applied Physics Letters . 2013,第1期

机译：GaInAsSb / GaAs量子阱对高速集成光电器件的电光特性
2. Electro-optic properties of GalnAsSb/GaAs quantum well for high-speec integrated optoelectronic devices [J] . Jiri Thorna, Baolai Liang, Charles Reyner, Applied Physics Letters . 2013,第1期

机译：GaAsSb / GaAs量子阱对高速集成光电器件的电光特性
3. High-speed GaAs/AlGaAs optoelectronic devices for computer applications [J] . IBM Journal of Research and Development . 1990,第4期

机译：用于计算机的高速GaAs / AlGaAs光电器件
4. Effect of Growth Interruption on the Properties of GaInAsSb/AlGaAsSb/GaSb Heterostructures and the Performance of Thermophotovoltaic Devices [C] . C.A. Wang, D.A. Shiau, M.K. Connors, Symposium on Compound Semiconductor Photovoltaics; 20030422-20030425; San Francisco,CA; US . 2003

机译：生长中断对GaInAsSb / AlGaAsSb / GaSb异质结构性能和热光电器件性能的影响
5. Optoelectronic devices based on low threshold strained InGaAs/GaAs quantum well lasers grown on structured substrates [D] . Frateschi, Newton Cesario 1993

机译：基于在结构化衬底上生长的低阈值应变InGaAs / GaAs量子阱激光器的光电器件
6. Broadband 2.4 μm superluminescent GaInAsSb/AlGaAsSb quantum well diodes for optical sensing of biomolecules [O] . M. B. Wootten, J. Tan, Y.J. Chien, -1

机译：宽带2.4μm超发光GaInAsSb / AlGaAsSb量子阱二极管用于生物分子的光学传感
7. Electro-optic properties of GaInAsSb/GaAs quantum well for high-speed integrated optoelectronic devices [O] . Thoma Jiri, Liang Baolai, Reyner Charles, 2013

机译：GaInAsSb / GaAs量子阱对高速集成光电器件的电光特性
8. Electronic GaAs-on-Silicon Material for Advanced High-Speed Optoelectronic Devices. [R] . Mauk, M. G., McNeely, J. B. 1991

机译：用于先进高速光电器件的电子Gaas-on-silicon材料。

Electro-optic properties of GaInAsSb/GaAs quantum well for high-speed integrated optoelectronic devices

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