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A waveform-shaping millimeter-wave oscillator with 184.7dBc/Hz FOM in 40nm digital CMOS process

机译:波形整形毫米波振荡器,采用40nm数字CmOs工艺,具有184.7dBc / Hz FOm

摘要

In this paper, a topology for millimeter-wave (mm­ wave) oscillator with a waveform-shaping operation is proposed with improved phase-noise. The 3rd harmonic enhancement for enforcing a pseudo-square voltage waveform and adjustable tuning-banks for wide tuning range are simultaneously achieved, based on a multi-stage broadside-coupled transformer (MSBCT) with recon gurable coupling factors at mm-wave. Meanwhile, to meet the high-Q, high-resolution, and metal density limits, a novel 3D self-shielded capacitor is developed for implementation of tuning-banks operating at mm-wave. To verify the mechanism of the structures above, a waveform-shaping mm-wave digitally­ controlled oscillator (DCO) is fabricated. The proposed oscillator has a state-of-the-art gure-of-merit (FoM) of 184.7dBcIHz at 58.1 GHz under 110°C, despite being realized in a digital CMOS 40nm process without customary ultra-thick metal option. The resolution for this DCO is about 2.5MHz within the whole tuning range. The chip core size is 315um by llOum.Index Terms-3D self-shielded capacitor, digitally-controlled oscillator (DCO), multi-stage broadside-coupled transformer (MSBCT), waveform-shaping, millimeter-wave (mm-wave).
机译:本文提出了一种具有波形整形操作的毫米波振荡器的拓扑结构,该拓扑结构具有改善的相位噪声。基于在毫米波上具有可重构耦合因子的多级宽边耦合变压器(MSBCT),可同时实现用于增强伪平方电压波形的三次谐波增强和可调节的调谐库,以实现宽调谐范围。同时,为了满足高Q,高分辨率和金属密度的限制,开发了一种新型3D自屏蔽电容器,用于实现在毫米波下工作的调谐库。为了验证上述结构的机理,制造了一种波形整形的毫米波数控振荡器(DCO)。尽管在没有常规超厚金属选项的数字CMOS 40nm工艺中实现,但拟议的振荡器在110°C下58.1 GHz时具有184.7dBcIHz的最新品质因数(FoM)。在整个调谐范围内,该DCO的分辨率约为2.5MHz。芯片的核心尺寸为315um x11um。索引条款3D自屏蔽电容器,数控振荡器(DCO),多级宽边耦合变压器(MSBCT),波形整形,毫米波(mm-wave)。

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