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Coplanar-PGL Transitions on High Resistivity Silicon Substrate in the 57-64 GHz Band and Influence of the Probe Station on the Performances

机译：57-64 GHz频带内高电阻率硅基板上的共面PGL跃迁以及探针台对性能的影响

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International audience

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Grzeskowiak Marjorie; Emond Julien; Lissorgues Gaëlle; Protat Stéphane; Deshours Frédérique; Richalot Elodie; Picon Odile;
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年度 2014
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1. A LOW-LOSS PLANAR GOUBAU LINE AND A COPLANAR-PGL TRANSITION ON HIGH-RESISTIVITY SILICON SUBSTRATE IN THE 57-64 GHz BAND [J] . J. Emond, M. Grzeskowiak, G. Lissorgues, Microwave and optical technology letters . 2012,第1期

机译：57-64 GHz频带中高损耗硅基质上的低损耗平面古柏线和Coplanar-PGL跃迁
2. PERFORMANCE OF INTEGRATED ANTENNAS ON SILICON SUBSTRATES OF HIGH AND LOW RESISTIVITIES UP TO 110 GHz FOR WIRELESS INTERCONNECTS [J] . Y. P. Zhang, M. Sun, W. Fan Microwave and optical technology letters . 2006,第2期

机译：无线互连时，集成天线在高和低电阻率高达110 GHz的硅衬底上的性能
3. FCC Tees Up 'Rip-and-Replace,'57-64 GHz Band, IB Filing Items [J] . Telecommunications Reports . 2021,第12期

机译：FCC TES UP'RIP-and-Replace，'57 -64 GHz频段，IB归档项目
4. Substrate Integrated Waveguide glass shaped slot antenna for 57-64 GHz applications [C] . T. Shanmugannatham, Nanda Kumar. M IEEE Indian Conference on Antennas and Propogation . 2019

机译：适用于57-64 GHz应用的基板集成波导玻璃形状缝隙天线
5. Ka-Band and W-Band Millimeter-Wave Wideband Linear Power Amplifier Integrated Circuits at 30 GHz and 90 GHz with Greater Than 100 mW OutputPowers in Commercially-Available 0.12 Micron Silicon Germanium HBT Technology [D] . Chang, Michael S. 2017

机译：采用商用0.12微米硅锗HBT技术的30 GHz和90 GHz的Ka波段和W波段毫米波宽带线性功率放大器集成电路，输出功率超过100 mW
6. Dielectric properties of porous silicon for use as a substrate for the on-chip integration of millimeter-wave devices in the frequency range 140 to 210 GHz [O] . Panagiotis Sarafis, Androula Galiouna Nassiopoulou 2014

机译：多孔硅的介电特性用作140至210 GHz频率范围内毫米波器件的片上集成的基板
7. Coplanar-PGL Transitions on High Resistivity Silicon Substrate in the 57-64 GHz Band and Influence of the Probe Station on the Performances [O] . Grzeskowiak Marjorie, Emond Julien, Lissorgues Gaëlle, 2014

机译：57-64 GHz频带内高电阻率硅基板上的共面PGL跃迁以及探针台对性能的影响

Coplanar-PGL Transitions on High Resistivity Silicon Substrate in the 57-64 GHz Band and Influence of the Probe Station on the Performances

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