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Stimulated emission of near-infrared radiation in silicon fin light-emitting diode

机译:硅鳍发光二极管中近红外辐射的受激发射

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摘要

We propose top-down processes to make silicon multiple quantum wells called fins for a light-emitting diode. The silicon fins are formed vertically to a substrate and embedded in a Si3N4 waveguide. By current injections into silicon fins, we have observed stimulated emission spectra peaked at the wavelengths corresponding to the periodic structures of fins. The near-field mode profiles obtained at the edge of the waveguide qualitatively agreed with theoretical calculations. It has been turned out that both transverse-electric and transverse-magnetic fields can contribute to the optical gain.
机译:我们提出了自上而下的工艺来制造硅多个量子阱,称为发光二极管的鳍。硅鳍垂直于基板形成并嵌入在Si3N4波导中。通过电流注入硅鳍片,我们观察到受激发射光谱在对应于鳍片周期性结构的波长处达到峰值。在波导边缘获得的近场模式轮廓在质量上与理论计算吻合。事实证明,横向电场和横向磁场都可以有助于光学增益。

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