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The effect of resin/hardener stoichiometry on the electrical properties of silicon nitride/epoxy nanocomposites

机译:树脂/硬化剂化学计量对氮化硅/环氧树脂纳米复合材料电性能的影响

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摘要

The effect of resin/hardener stoichiometry was investigated for both unfilled epoxy and nanocomposite samples. The results indicate that incorporating silicon nitride nanofiller, which contains amine groups on its surface, has a significant influence on the resin/hardener reaction. At 2 wt.% of nanofiller, it was estimated that the powder contains amine groups equivalent to around 5 wt.% of the hardener mass, which results in the displacement of the optimum resin/hardener mass ratio by the same amount (~5 wt.%). The dielectric spectra showed that the B relaxation is directly related to the hydroxyether groups that are generated by the reaction between the epoxy and the amine groups. Therefore, the relaxation strength is proportional to the crosslinking density and consequently related to the glass transition temperature. The DC conductivity increases considerably as a result of incorporating silicon nitride nanofiller when not compensating for its impact on the resin/hardener stoichiometry. This might be related to the increase in the amine content of the material caused by the amine groups existing on the surface of the nanoparticles. When the stoichiometry effect is taken into account, the DC conductivity decreased to a value that is comparable to that of the unfilled polymer.
机译:对于未填充的环氧树脂和纳米复合材料样品,研究了树脂/固化剂化学计量的影响。结果表明,掺入氮化硅纳米填料(其表面含有胺基)对树脂/固化剂反应具有重大影响。据估计,在纳米填料的2 wt。%时,粉末中的胺基含量相当于硬化剂质量的5 wt。%,这导致最佳树脂/硬化剂质量比以相同的量(〜5 wt 。%)。介电谱表明,B弛豫与环氧基和胺基之间的反应产生的羟基醚基直接相关。因此,驰豫强度与交联密度成正比,因此与玻璃化转变温度有关。当不补偿氮化硅纳米填料对树脂/固化剂化学计量的影响时,由于掺入氮化硅纳米填料,其直流电导率会显着增加。这可能与由纳米颗粒表面上存在的胺基引起的材料中胺含量的增加有关。当考虑化学计量效应时,DC电导率降低到与未填充聚合物的DC电导率相当的值。

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