In this work, we demonstrate the use of HWCVD as an alternative technique to grow SiN layers for photonic waveguides at temperatures 400ºC. In particular, the effect of the ammonia flow and the filament temperature on the material structure, optical properties and propagation losses of the deposited films was investigated. SiN layers with good thickness uniformity, roughness as low as 0.61nm and H concentration as low as 10.4x10^21 atoms/cm3 were obtained. Waveguides fabricated on the studied materials exhibited losses as low as 7.1 and 12.3 dB/cm at 1310 and 1550nm respectively.
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机译：在这项工作中，我们证明了使用HWCVD作为替代技术，可在温度低于400ºC的情况下为光子波导生长SiN层。特别地，研究了氨流量和细丝温度对沉积膜的材料结构，光学性质和传播损失的影响。得到具有良好的厚度均匀性，粗糙度低至0.61nm和H浓度低至10.4x10 ^ 21atoms / cm3的SiN层。在研究的材料上制造的波导在1310和1550nm处的损耗分别低至7.1和12.3 dB / cm。
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