Growth of single and multilayer sesquioxide crystal films for lasing applications via pulsed laser deposition

摘要

Sesquioxides, materials of the form RE2O3 (RE: rare earth), are of great interest for lasing applications. These materials offer high thermal conductivities, are mechanically stable, can easily be doped with various rare earth ions and are optically isotropic. Members of the sesquioxide family have the same crystal structure but differing refractive indices, and hence are ideal candidates for multilayer as well as single film growth. Sesquioxides can be challenging to grow from the melt, however, due to their high melting points (2400 °C)