Ultra-broadband transmission measurements on waveguides of silicon-rich silicon dioxide

摘要

We report ultrabroadband measurements on waveguides of photoluminescent silicon-rich silicon dioxide produced by plasma enhanced chemical vapor deposition. Material absorption below 700 nm and waveguide loss above 1300 nm leave a broad spectral region of good transmission properties, which overlaps with the photoluminescence spectrum of the core material. Proposed mechanisms for the material absorption and photoluminescence are discussed based on our findings.