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Thin film amorphous silicon cells by inductive PECVD, with a view towards flexible substrates

机译:通过电感pECVD实现薄膜非晶硅电池,以实现柔性基板

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摘要

A range of amorphous silicon based films and solar cells have been fabricated using an inductively coupled PECVD reactor in order to investigate how the deposition conditions influenced their properties. Complete cells were deposited onto rigid and flexible substrates, and homogeneous thin films were grown to investigate their optical and electrical properties separately from the influence of whole devices. Initial photoconductivity measurements performed on intrinsic amorphous silicon showed that it was suitable for photovoltaic applications (10-4-1cm-1), complete single junction pin superstrate cells were then fabricated. The deposition conditions were altered tooptimise cell efficiency, and the impact of substrate temperature, RF power, gas flow rate, system pressure, and substrate choice was commented on. The best cell producedwas grown at 250C and was 8.05% efficient, after reversal of its structure to nip an efficiency of 5.77% was observed.The deposition temperature was lowered to 200C, and the properties of doped and intrinsic amorphous silicon films were investigated using measurements of the dark conductivityvariation with temperature and spectroscopic ellipsometry. Optimum growth conditions were determined for each type of film and an nip cell was deposited using them resulting in an efficiency of 4.59%. The requirement of a carefully selected intrinsic region thickness in order to achieve effective collection of generated carriers was considered.Lastly the process was transfered from rigid glass to flexible polished stainless steel and Kapton substrates, requiring inversion of the cell orientation. A 1cm2 cell on a steel substratewas found to be functional under illumination and was 0.27% efficient. A 1cm2 cell was deposited onto Kapton but was only measured under dark conditions. It was concluded that the rear contact topography and defect density is of significant importance when dealing with flexible substrates and that sputtering rather than evaporation would have been a more suitable technique to fabricate it.
机译:为了研究沉积条件如何影响其性能,已经使用感应耦合的PECVD反应器制造了一系列基于非晶硅的薄膜和太阳能电池。将完整的电池沉积在刚性和柔性的基板上,并生长均匀的薄膜以独立于整个器件的影响来研究其光学和电学性质。在本征非晶硅上进行的初步光电导率测量表明,它适用于光伏应用(10-4-1cm-1),然后制造了完整的单结引脚覆膜单元。改变沉积条件以优化电池效率,并评论了基板温度,RF功率,气体流速,系统压力和基板选择的影响。产生的最佳电池在250°C时生长,效率为8.05%,在将其结构反转为压区后,观察到效率为5.77%。沉积温度降至200°C,并通过测量研究了掺杂和本征非晶硅膜的性能温度和光谱椭圆偏振法测定暗电导率变化确定了每种薄膜的最佳生长条件,并使用它们沉积了一个nip细胞,其效率为4.59%。为了实现有效收集生成的载流子,需要仔细选择本征区域的厚度。最后,该过程从刚性玻璃转移到柔性抛光的不锈钢和Kapton基板上,需要反转晶胞取向。发现在钢基底上的1cm 2电池在照明下可起作用,并且效率为0.27%。将1cm2的电池沉积到Kapton上,但仅在黑暗条件下测量。得出的结论是,在处理柔性基板时,后触点的形貌和缺陷密度非常重要,并且溅射而不是蒸发将是一种更合适的制造方法。

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  • 作者

    Clark Owain D.;

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  • 年度 2009
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  • 原文格式 PDF
  • 正文语种 {"code":"en","name":"English","id":9}
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