Investigation of narrow-band semiconductor quantum well structures using a synchronously-pumped optical parametric oscillator

摘要

Measurements of spin relaxation processes were made in the technologically interesting InGaAs/InP quantum well system. The first non-linear pump and probe measurements were performed in a single 80Å lattice-matched InGaAs/InP quantum well layer. To make these measurements a synchronously-pumped parametric oscillator was constructed, using periodically-poled lithium niobate as its non-linear element. Investigations of dominant carrier species and their associated spin relaxation were made as a function of temperature. A model was constructed for comparison to the experimental data showing the dominance of excitons at low temperature, with un-bound electron-hole effects dominating at temperatures above 100K.