A new vertical power MOSFET with extremely reduced on resistance and high switching speed with multilayer structure

摘要

A vertical power MOSFET’s whose n-drift region is stacked by alternate pn structure named as MULTILAYER POWER MOSFET has been proposed for high voltage application with extremely low onresistance. However, the device capacitance increases by a significant amount that has the possibility to reduce the switching speed of the devices. Therefore, a trade off is established to reduce RC time constant by changing the thickness of the stacking. The electrical characteristics of a CONVENTIONAL POWER MOSFET having trench contact for the source and body regions are compared with that of our proposed multilayer structure. The device prooves itself as a high performance MOSFET with high speed and high storage capacity.