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Ultra low silicon substrate noise crosstalk using metal Faraday cages in a silicon-on-insulator technology.

机译：采用绝缘体上硅技术的金属法拉第笼，实现超低硅衬底噪声串扰。

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Stefanou S; Hamel J; Baine P; Armstrong M; Gamble H; Kraft M; Kemhadjian H A;
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年度 2004
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原文格式 PDF
正文语种 {"code":"en","name":"English","id":9}
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1. Ultralow Silicon Substrate Noise Crosstalk Using Metal Faraday Cages in an SOI Technology [J] . S. Stefanou, John S. Hamel, P. Baine, IEEE Transactions on Electron Devices . 2004,第3期

机译：SOI技术中使用金属法拉第笼的超低硅基板噪声串扰
2. Ultra-Low Noise Schottky Junction Tri-Gate Silicon Nanowire FET on Bonded Silicon-on-Insulator Substrate [J] . Yu Yingtao, Chen Si, Hu Qitao, IEEE Electron Device Letters . 2021,第4期

机译：超低噪声肖特基结三栅极硅纳米线FET在粘结硅式绝缘体上
3. Effects of Substrate Bias on Low-Frequency Noise in Lateral Bipolar Transistors Fabricated on Silicon-on-Insulator Substrate [J] . Hu Qitao, Chen Si, Zhang Shi-Li, IEEE Electron Device Letters . 2020,第1期

机译：硅 - 绝缘基板上横向双极晶体管中衬底偏置对低频噪声的影响
4. Ultra-compact and Low Crosstalk 1xN Multimode Interference Splitter on Silicon-on-insulator [C] . Smit Desai, Gang Yang, Liwei Li, Conference on Lasers and Electro-Optics Pacific Rim . 2020

机译：绝缘体上硅上的超紧凑和低串扰1xN多模干扰分配器
5. Dislocation dynamics of silicon-germanium relaxation on silicon-on-insulator substrates. [D] . Rehder, Eric Michael. 2002

机译：绝缘体上硅衬底上硅锗弛豫的位错动力学。
6. Empirical and Theoretical Modeling of Low-Frequency Noise Behavior of Ultrathin Silicon-on-Insulator MOSFETs Aiming at Low-Voltage and Low-Energy Regime [O] . Yasuhisa Omura 2019

机译：面向低电压低能耗的超薄绝缘体上硅MOSFET低频噪声行为的经验和理论模型
7. Ultra Low silicon substrate noise crosstalk using metal Faraday cages in a silicon-on-insulator technology. [O] . Stefanou Stefanos, Hamel John, Bain J S, 2003

机译：采用绝缘体上硅技术的金属法拉第笼，具有超低硅衬底噪声串扰。

Ultra low silicon substrate noise crosstalk using metal Faraday cages in a silicon-on-insulator technology.

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