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Versatile ytterbium ion trap experiment for operation of scalable ion-trap chips with motional heating and transition-frequency measurements

机译:多功能镱离子阱实验,用于可扩展离子阱芯片的运行,具有运动加热和过渡频率测量

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摘要

We present the design and operation of an ytterbium ion trap experiment with a setup offering versatile optical access and 90 electrical interconnects that can host advanced surface and multilayer ion trap chips mounted on chip carriers. We operate a macroscopic ion trap compatible with this chip carrier design and characterize its performance, demonstrating secular frequencies >1 MHz, and trap and cool nearly all of the stable isotopes, including 171Yb+ ions, as well as ion crystals. For this particular trap we measure the motional heating rate 〈ṅ〉 and observe an 〈ṅ〉∝1/ω2 behavior for different secular frequencies ω. We also determine a spectral noise density SE(1 MHz)=3.6(9)×10-11 V2 m-2 Hz-1 at an ion electrode spacing of 310(10) μm. We describe the experimental setup for trapping and cooling Yb+ ions and provide frequency measurements of the 2S1/2↔2P1/2 and 2D3/2↔3D[3/2]1/2 transitions for the stable 170Yb+, 171Yb+, 172Yb+, 174Yb+, and 176Yb+ isotopes which are more precise than previously published work.
机译:我们介绍了with离子阱实验的设计和操作,该设置提供了通用的光学通道和90个电气互连,可以容纳安装在芯片载体上的先进表面和多层离子阱芯片。我们操作与该芯片载体设计兼容的宏观离子阱,并表征其性能,证明长期频率> 1 MHz,并捕获和冷却几乎所有稳定的同位素,包括171Yb +离子以及离子晶体。对于这个特殊的陷阱,我们测量运动加热速率〈ṅ〉,并观察forn for1 /ω2在不同的世俗频率ω下的行为。我们还确定了在310(10)μm的离子电极间距下的频谱噪声密度SE(1 MHz)= 3.6(9)×10-11 V2 m-2 Hz-1。我们描述了捕获和冷却Yb +离子的实验装置,并提供了2S1 /2↔2P1/ 2和2D3 /2↔3D[3/2] 1/2跃迁的频率测量值,以求出稳定的170Yb +,171Yb +,172Yb +,174Yb +,和176Yb +同位素比以前发表的工作更为精确。

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