A dual-band outphasing transmitter using broadband class E power amplifiers

摘要

In this paper, a dual-band outphasingudtransmitter (able of operating either at 770 MHz or 960 MHzudfrequency bands) is presented. Two broadband RF powerudamplifiers (PAs) have been designed over packaged GaN HEMTuddevices, switching close to the nominal zero-voltage and zerovoltage-derivativeudclass E conditions. A reactive combiner, usingudtransmission lines of appropriate electrical lengths at both bands,udtogether with compensating reactances, allows positioning theuddrain impedance loci to produce high efficiency and gooduddynamic range profiles. Average drain efficiency figures overud68% and 38% have been measured for WCDMA signals with audpeak-to-average power ratio (PAPR) of 5.1 dB and 8.4 dB,udrespectively.