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Bright visible-infrared light emitting diodes based on hybrid halide perovskite with Spiro-OMeTAD as a hole-injecting layer

机译:基于混合卤化物钙钛矿和spiro-OmeTaD作为空穴注入层的明亮可见红外发光二极管

摘要

Hybrid halide perovskites that are currently intensively studied for photovoltaic applications, also present outstanding properties for light emission. Here, we report on the preparation of bright solid state light emitting diodes (LEDs) based on a solution-processed hybrid lead halide perovskite (Pe). In particular, we have utilized the perovskite generally described with the formula CH3NH3PbI3-xClx and exploited a configuration without electron or hole blocking layer in addition to the injecting layers. Compact TiO2 and Spiro-OMeTAD were used as electron and hole injecting layers, respectively. We have demonstrated a bright combined visible-infrared radiance of 7.1 W·sr–1·m–2 at a current density of 232 mA·cm–2, and a maximum external quantum efficiency (EQE) of 0.48%. The devices prepared surpass the EQE values achieved in previous reports, considering devices with just an injecting layer without any additional blocking layer. Significantly, the maximum EQE value of our devices is obtained at applied voltages as low as 2 V, with a turn-on voltage as low as the Pe band gap (Vturn-on = 1.45 ± 0.06 V). This outstanding performance, despite the simplicity of the approach, highlights the enormous potentiality of Pe-LEDs. In addition, we present a stability study of unsealed Pe-LEDs, which demonstrates a dramatic influence of the measurement atmosphere on the performance of the devices. The decrease of the electroluminescence (EL) under continuous operation can be attributed to an increase of the non-radiative recombination pathways, rather than a degradation of the perovskite material itself.
机译:混合卤化物钙钛矿目前已在光伏应用中进行了深入研究,它们还具有出色的发光性能。在这里,我们报告基于溶液处理的混合卤化钙钛矿(Pe)制备明亮的固态发光二极管(LED)。特别地,我们已经使用了通式为CH3NH3PbI3-xClx的钙钛矿,并利用了除了注入层之外没有电子或空穴阻挡层的结构。紧凑型TiO2和Spiro-OMeTAD分别用作电子注入层和空穴注入层。我们已经证明,在电流密度为232 mA·cm-2的情况下,可见光的合并红外辐射亮度为7.1 W·sr-1·m-2,最大外部量子效率(EQE)为0.48%。考虑到仅具有注入层而没有任何附加阻挡层的设备,所准备的设备超过了先前报告中获得的EQE值。重要的是,我们的设备的最大EQE值是在低至2V的施加电压下获得的,而开启电压则低至Pe带隙(Vturn-on = 1.45±0.06 V)。尽管方法简单,但这种出色的性能突出了Pe-LED的巨大潜力。此外,我们还对未密封的Pe-LED进行了稳定性研究,该研究证明了测量气氛对设备性能的巨大影响。连续操作下电致发光(EL)的降低可归因于非辐射复合途径的增加,而不是钙钛矿材料本身的降解。

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