Carrier recombination losses in inverted polymer: Fullerene solar cells with ZnO hole-blocking layer from transient photovoltage and impedance spectroscopy techniques.

摘要

In this study, full coincidence between impedance spectroscopy and transient photovoltage techniques in measuring recombination kinetics of photogenerated charge carriers in inverted polymer:fullerene organic solar cells with ZnO hole-blocking layer is reported. Carrier lifetime exhibits values at illumination intensities near 1 sun within the microseconds time scale. Photogenerated charge carrier density attains values within 1015–1016 cm−3. Decay kinetics is analyzed by means of a bimolecular recombination law with a recombination coefficient slightly dependent on the charge density, which lies within the order of k ∼ 10−12 cm3 s−1. It is also demonstrated that inverted-processed cells exhibit capacitance, recombination resistance, and lifetime parameters comparable to those extracted from regular cells, despite the great differences between the contact structures of these kinds of devices.