Two-dimensional physical and numerical modelling of InP-based heterojunction bipolar transistors

摘要

State-of-the-art HBTs were designed, grown, fabricated and characterized in-house. The novelty of this process was the use of dimeric phosphorus generated from a Gallium Phosphide (GaP) decomposition source, which permitted growth at a fairly low temperature (42O°C) while conserving extremely high quality materials. A self- aligned ransistor with an emitter area of 5×5μm2 demonstrated a low offset voltage of 15OmV and high current gain of 90. An excellent agreement with the measured data was chieved using physical modelling pakages developed by SILVACO. © 2008 IEEE.