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The Effects of Pressure and Temperature on Partial Discharge Degradation of Silicone Conformal Coatings

机译:压力和温度对有机硅保形涂层局部放电降解的影响

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摘要

The partial discharge damage rates for silicone-coated printed circuit boards have been quantified in a series of experiments at pressures and temperatures relevant to the aerospace industry (down to 116 mbar, –55°C to +70°C) and up to 6 kV. Surface cracking was observed, and damage magnitude was found to be non-linear with coating thickness, with thinner coatings experiencing relatively greater damage rates. This is attributed to higher surface electric fields for a given energisation voltage. Increasing temperature or reducing pressure increased the rate of damage. For coating thicknesses less than 100 μm, reducing pressure to 116 mbar (1 mbar = 100 Pa) increased the relative crack growth rate by nearly an order of magnitude. Temperature change had the most profound influence on damage; low temperatures were observed to substantially reduce damage rate, with very little or no damage observed, whereas higher temperatures substantially increased damage rate, with the resulting magnitude of surface damage too large to quantify. Silicone coatings of thickness greater than 250 μm showed no appreciable damage from partial discharge when aged at either low pressure or high temperature at voltages up to 6 kV. Corresponding damage-free surface electric fields are computed. No samples were observed to fail, indicating the robustness of high quality silicone coatings. Possible causes of crack formation in silicone are discussed.
机译:在一系列与航空航天业相关的压力和温度(低至116 mbar,–55°C至+ 70°C)和最高6 kV的压力和温度下,已对一系列有机硅涂层印刷电路板的局部放电损坏率进行了量化。 。观察到表面开裂,并且发现损伤程度与涂层厚度成非线性关系,更薄的涂层具有相对更大的损伤率。对于给定的激励电压,这归因于较高的表面电场。升高温度或降低压力会增加损坏率。对于小于100μm的涂层,将压力降低至116 mbar(1 mbar = 100 Pa)可使相对裂纹扩展速率提高近一个数量级。温度变化对破坏的影响最大。观察到低温显着降低了损伤率,而观察到的损伤很少或没有,而高温显着提高了损伤率,导致的表面损伤程度太大而无法量化。厚度大于250μm的有机硅涂层在低压或高温下在高达6 kV的电压下老化时,不会因局部放电而受到明显损坏。计算出相应的无损伤表面电场。没有观察到任何样品失败,表明高质量的有机硅涂层的坚固性。讨论了在硅树脂中形成裂纹的可能原因。

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