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Deep level transient spectroscopy (DLTS) study of defects introduced in antimony doped Ge by 2 MeV proton irradiation

机译：深层瞬态光谱（DLTs）研究2 meV质子辐照引入锑掺杂Ge中的缺陷

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Nyamhere Cloud; Das A.G.M.; Pineda-Vargas C.A.; Venter Andre; Auret F.D. (Francois Danie); Chawanda Albert;
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年度 2011
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正文语种 eng
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1. Deep level transient spectroscopy (DLTS) study of defects introduced in antimony doped Ge by 2 MeV proton irradiation [J] . Nyamhere C., Das A.G.M., Auret F.D., Physica, B. Condensed Matter . 2011,第15a16期

机译：2 MeV质子辐照在掺锑Ge中引入的缺陷的深层瞬态光谱（DLTS）研究
2. Characterization of defects introduced in Sb doped Ge by 3 keV Ar sputtering using deep level transient spectroscopy (DLTS) and Laplace-DLTS (LDLTS) [J] . Nyamhere C, Das AGM, Auret FD, Physica, B. Condensed Matter . 2009,第22期

机译：使用深能级瞬态光谱（DLTS）和Laplace-DLTS（LDLTS）通过3 keV Ar溅射法对掺Sb的Ge中引入的缺陷进行表征
3. I-V, C-V and deep level transient spectroscopy study of 24 MeV proton-irradiated bipolar junction transistor [J] . K. V. Madhu, S. R. Kulkarni, R. Damle Pramana . 2010,第1期

机译：24 MeV质子辐照双极结晶体管的I-V，C-V和深层瞬态光谱研究
4. A study of the dependence of electron-induced defects on the doping impurity density in n-type germanium by deep-level transient spectroscopy (DLTS) [C] . Cloud Nyamhere, F.D. Auret, A.G.M. Das, International Conference on Defects in Semiconductors; 20070722-27; Albuquerque,NM(US) . 2007

机译：深层瞬态光谱法研究电子诱导缺陷对n型锗掺杂杂质密度的依赖性
5. Defect Characterization of 4H-SiC by Deep Level Transient Spectroscopy (DLTS) and Influence of Defects on Device Performance [D] . Mannan, Mohammad Abdul 2015

机译：用深层瞬态光谱法（DLTS）表征4H-SiC的缺陷及其对器件性能的影响
6. Deep level transient spectroscopic investigation of phosphorus-doped silicon by self-assembled molecular monolayers [O] . Xuejiao Gao, Bin Guan, Abdelmadjid Mesli, -1

机译：自组装分子单层膜对磷掺杂硅的深层瞬态光谱研究
7. Characterization of defects introduced in Sb doped Ge by 3keV Ar sputtering using deep level transient spectroscopy (DLTS) and Laplace-DLTS (LDLTS) [O] . Nyamhere, Cloud, Das, A.G.M., Odendaal, R.Q., 2009

机译：使用深能级瞬态光谱（DLTs）和Laplace-DLTs（LDLTs）通过3keV ar溅射在sb掺杂Ge中引入缺陷的表征

Deep level transient spectroscopy (DLTS) study of defects introduced in antimony doped Ge by 2 MeV proton irradiation

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