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Infrared absorption, multiphonon processes and time reversal effect on Si and Ge band structure

机译:红外吸收,多声子过程和时间反转对si和Ge能带结构的影响

摘要

We have examined the effect of Time Reversal Symmetry (TRS) on vibrational modes and on the electronic band structure of Si and Ge. Most of the primary non-interacting modes are not affected by TRS. Only phonons originating from high symmetry lines S and A of the Brillouin Zone (BZ) indicate extra degeneracy. Selection rules for some two and three phonons originating from high symmetry lines are determined. The states of electrons and holes described by electronic band structure due to spin-inclusion are assigned by spinor representations of the double space group. Inclusion of the TRS into the band structure results in extradegeneracy of electrons and holes, and therefore optical selection rules suppose to be modified.
机译:我们已经研究了时间反转对称性(TRS)对振动模式以及对Si和Ge的电子能带结构的影响。大多数主要的非交互模式不受TRS的影响。仅源自布里渊区(BZ)的高对称线S和A的声子表示额外的简并性。确定了源自高对称线的大约两个和三个声子的选择规则。由于自旋包含而由电子能带结构描述的电子和空穴的状态由双空间群的自旋表示表示。将TRS包含在能带结构中会导致电子和空穴的超简并性,因此,光学选择规则应该被修改。

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