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Demonstration of boron arsenide heterojunctions: A radiation hard wide band gap semiconductor device

机译：砷化硼异质结的演示：辐射硬宽带隙半导体器件

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Gong, Y; Tapajna, M; Bakalova, S; Zhang, Y; Edgar, J H; Dudley, M; Hopkins, Margaret; Kuball, M;
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年度 2010
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1. Demonstration of boron arsenide heterojunctions: A radiation hard wide band gap semiconductor device [J] . Y. Gong, M. Tapajna, S. Bakalova, Applied Physicsletters . 2010,第22期

机译：砷化硼异质结的演示：辐射硬宽带隙半导体器件
2. Photosensitization and photocurrent switching effects in wide band gap semiconductors: CuI and TiO2 functionalized with iron and nickel complexes: from semiconductors to logic devices [J] . Wojtyla Szymon, Baran Tomasz Journal of inorganic and organometallic polymers and materials . 2017,第2期

机译：宽带隙半导体中的光敏化和光电流转换效应：铁和镍络合物官能化的CuI和TiO2：从半导体到逻辑器件
3. Crystal Growth of Tl_4CdI_6: A Wide Band Gap Semiconductor for Hard Radiation Detection [J] . Shichao Wang, Zhifu Liu, John A. Peters, Crystal growth & design . 2014,第5期

机译：Tl_4CdI_6的晶体生长：用于硬辐射检测的宽带隙半导体
4. Current and future directions in power electronic devices and circuits based on wide band-gap semiconductors [C] . Isik C. Kizilyalli, Yanzhi Ann Xu, Eric Carlson, 2017 IEEE 5th Workshop on Wide Bandgap Power Devices and Applications . 2017

机译：基于宽带隙半导体的电力电子设备和电路的当前和未来方向
5. Characterization of p-type wide band gap transparent oxide for heterojunction devices. [D] . Lim, Sang-Hyun. 2009

机译：用于异质结器件的p型宽带隙透明氧化物的表征。
6. Enhanced Photovoltaic Properties of Bulk Heterojunction Organic Photovoltaic Devices by an Addition of a Low Band Gap Conjugated Polymer [O] . Eui Jin Lee, Min Hee Choi, Doo Kyung Moon 2016

机译：通过添加低带隙共轭聚合物增强了本体异质结有机光伏器件的光伏性能
7. Demonstration of boron arsenide heterojunctions: A radiation hard wideband gap semiconductor device [O] . Gong Y., Tapajna M., Bakalova S., 2010

机译：砷化硼异质结的演示：宽幅辐射带隙半导体器件

Demonstration of boron arsenide heterojunctions: A radiation hard wide band gap semiconductor device

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