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Defect chemistry and proton conductivity in Ba-based perovskites

机译:Ba基钙钛矿中的缺陷化学和质子传导性

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摘要

The site incorporation mechanism of M3+ dopants into A2+B4+O3 perovskites controls the overall defect chemistry and thus their transport properties. For charge balance reasons, incorporation onto the A2+ site would require the creation of negatively charged point defects, such as cation vacancies, whereas incorporation onto the B4+ site is accompanied by the generation of positively charged defects, typically oxygen vacancies. Oxygen vacancy content, in turn, is relevant to proton conducting oxides in which protons are introduced via the dissolution of hydroxyl ions at vacant oxygen sites.ududThis work proposes that, on the basis of X-ray powder diffraction studies, electron microscopy, chemical analysis, thermal gravimetric analysis, AC impedance spectroscopy, extended X-ray fine structure (EXAFS) and atomistic simulation, that nominally B-site doped barium cerate can exhibit dopant partitioning partially as a consequence of barium evaporation at elevated temperatures. Such partitioning and the presence of significant dopant concentrations on the A-site negatively impact proton conductivity. As a consequence of the greater ability of larger cations to exist on the Ba site, the H2O adsorption and proton conductivities of large-cation doped barium cerates are lower than those of small-cation doped analogs.ududA series of dopants, La, Nd, Sm, Gd and Yb are adopted in doped BaCeO3 with the composition BaCe0.85M0.15O3-[delta]. Yb doped BaCeO3 yields the highest proton conductivity among all the doped samples. Compositional non-stoichiometry, which is closely tied to sample processing, is studied in a BaxCe0.85M0.15O3[plus or minus delta] series. It is indicated that low temperature synthesis is beneficial to reduce barium evaporation at elevated temperatures and in turn increase the proton conductivity. The chemical stability of BaCeO3 is investigated and Zr is used to stabilize BaCeO3 in CO2-rich atmosphere effectively. This result helps to commercialize doped BaCeO3 as the electrolyte material for SOFCs.
机译:M3 +掺杂剂向A2 + B4 + O3钙钛矿中的位点掺入机制控制着整体缺陷化学,从而控制了它们的传输性能。出于电荷平衡的原因,掺入A2 +位将需要产生带负电荷的点缺陷,例如阳离子空位,而掺入B4 +位则伴随着带正电荷的缺陷的产生,通常是氧空位。反过来,氧空位含量与质子传导氧化物有关,在质子传导氧化物中,质子是通过在空氧位点溶解氢氧根离子而引入质子的。 ud ud这项工作提出,在X射线粉末衍射研究的基础上,电子显微镜,化学分析,热重量分析,交流阻抗谱,扩展的X射线精细结构(EXAFS)和原子模拟,标称B位置掺杂的铈酸钡由于钡在高温下的蒸发而部分地表现出掺杂剂分配。这样的分配以及在A位上存在明显的掺杂剂浓度对质子传导性产生负面影响。由于较大的阳离子在Ba位点上存在的能力更大,因此,大阳离子掺杂的铈钡酸盐的水吸附和质子电导率低于小阳离子掺杂的类似物。 ud ud一系列掺杂剂La在组成为BaCe0.85M0.15O3-δ的掺杂的BaCeO3中采用Nb,Nd,Sm,Gd和Yb。在所有掺杂样品中,掺Yb的BaCeO3产生最高的质子传导率。与样品处理紧密相关的组成非化学计量学以BaxCe0.85M0.15O3正负系列来研究。结果表明,低温合成有利于减少钡在高温下的蒸发,进而提高质子传导率。研究了BaCeO3的化学稳定性,并使用Zr有效地在富含CO2的气氛中稳定BaCeO3。该结果有助于将掺杂的BaCeO3作为SOFC的电解质材料商业化。

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    Wu Jian;

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