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Intrinsic point defect clustering during Czochralski growth of (silicon and) germanium

机译：Czochralski（硅和锗）生长过程中的本征点缺陷聚类

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Vanhellemont Jan; Śpiewak Piotr;
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年度 2010
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正文语种 eng
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1. Simulation of intrinsic point defect properties and vacancy clustering during Czochralski germanium crystal growth [J] . Spiewak P, Kurzydlowski KJ, Vanhellemont J, Materials science in semiconductor processing . 2006 ,第4a5期

机译：Czochralski锗晶体生长过程中本征点缺陷性质和空位聚集的模拟
2. On intrinsic point defect cluster formation during Czochralski crystal growth [J] . Jan Vanhellemont, Piotr Spiewak, Koji Sueoka, Physica status solidi . 2009 ,第8期

机译：直拉晶体生长过程中本征点缺陷簇的形成
3. Intrinsic point defects and grown-in microdefects in silicon crystals-comment on: "Intrinsic point defect behaviour in silicon crystals during growth from the melt: A model derived from experimental results", T. Abe, T. Takahashi, Journal of Crystal Growth 334 (2011) 16 [J] . V.V. Voronkov, R. Falster Journal of Crystal Growth . 2012 ,第1期

机译：硅晶体的本征点缺陷和生长的微缺陷，评论：“从熔体生长过程中硅晶体的本征点缺陷行为：源自实验结果的模型”，T。Abe，T。Takahashi，《晶体生长杂志》 334 （2011）16
4. The effect of germanium doping on the production of carbon-related defects in electron-irradiated Czochralski silicon [C] . C. A. Londos, A. Andrianakis, D. Aliprantis, International Meeting on Gettering and Defect Engineering in Semiconductor Technology . 2010

机译：锗掺杂对电子辐照Czochralski硅生产碳相关缺陷的影响
5. Study of electronic characteristics of heterojunction with intrinsic thin-layer devices and defect density profile of nanocrystalline silicon germanium devices. [D] . Mulder, Watson. 2015

机译：研究本征薄膜器件异质结的电子特性和纳米晶锗锗器件的缺陷密度分布。
6. Growth and Selective Etch of Phosphorus-Doped Silicon/Silicon–Germanium Multilayers Structures for Vertical Transistors Application [O] . Chen Li, Hongxiao Lin, Junjie Li, 2020

机译：用于垂直晶体管应用的磷掺杂硅/硅锗多层结构的生长和选择性蚀刻
7. Study of electronic characteristics of heterojunction with intrinsic thin-layer devices and defect density profile of nanocrystalline silicon germanium devices [O] . Mulder, Watson Paul 2015

机译：固有薄膜器件异质结的电子特性和纳米晶锗锗器件的缺陷密度分布研究
8. Continuous Czochralski Growth. Development of Advanced Czochralski Growth Process to Produce Low Cost 150 Kg Silicon Ingots from a Single Crucible for Technology Readiness [R] . Wohlgemuth, J. H., Culik, J. S. 1982

机译：连续的Czochralski增长。开发先进的Czochralski生长工艺，从单坩埚生产低成本150 Kg硅锭，实现技术准备

Intrinsic point defect clustering during Czochralski growth of (silicon and) germanium

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