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Effect of coalescence layer thickness on the properties of thin-chip InGaN/GaN light emitting diodes with embedded photonic quasi-crystal structures

机译：聚结层厚度对具有嵌入式光子准晶体结构的薄芯片InGaN / GaN发光二极管性能的影响

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Shields Philip A; Charlton Martin D B; Lewins Christopher J; Gao Xiang; Allsopp Duncan W E; Wang Wang N; Humphreys Bedwyr;
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年度 2012
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1. Effect of coalescence layer thickness on the properties of thin-chip InGaN/GaN light emitting diodes with embedded photonic quasi-crystal structures [J] . Philip A. Shields, Martin D. B. Charlton, Christopher J. Lewins, Physica status solidi . 2012,第3期

机译：聚结层厚度对具有嵌入式光子准晶体结构的薄芯片InGaN / GaN发光二极管性能的影响
2. Light-Output-Power Enhancement of GaN-Based Light-Emitting Diodes on an n-GaN Layer Using a Photonic Quasi-Crystal Overgrowth [J] . Electron Device Letters, IEEE . 2010,第6期

机译：使用光子准晶体过度生长增强n-GaN层上基于GaN的发光二极管的光输出功率
3. Light Extraction Efficiency Enhancement of GaN-Based Light Emitting Diodes on n-GaN Layer Using a SiO_2 Photonic Quasi-Crystal Overgrowth [J] . H. W. Huang, K. Y. Lee, J. K. Huang, Journal of nanoscience and nanotechnology . 2010,第10期

机译：使用SiO_2光子准晶体过度生长来增强n-GaN层上基于GaN的发光二极管的光提取效率
4. Enhanced output power of InGaN/GaN light-emitting diodes with a multilayered structure of AlGaN/GaN electron blocking layer [C] . You Li, Jun Wang, Yang Hu, Conference on optoelectronic devices and integration . 2020

机译：具有AlGaN / GaN电子阻挡层的多层结构的InGaN / GaN发光二极管的增强输出功率
5. Modeling and Analysis of Quantum Well Structures in GaN/InGaN Light Emitting Diodes. [D] . Kuchipudi, Lekha. 2014

机译：GaN / InGaN发光二极管中量子阱结构的建模和分析。
6. Investigation of Photonic-Crystal-Structured p-GaN Nanorods Fabricated by Polystyrene Nanosphere Lithography Method to Improve the Light Extraction Efficiency of InGaN/GaN Green Light-Emitting Diodes [O] . Po-Hsun Lei, Po-Chun Yang, Po-Chun Huang 2021

机译：聚苯乙烯纳米光学光刻法制备的光子晶体结构P-GAN纳米棒的研究提高了INGAN / GAN绿色发光二极管光提取效率
7. Performance of InGaN/GaN Light Emitting Diodes with n-GaN Layer Embedded with SiO2 Nano-Particles [O] . Hong-Seo Yom, Jin-Kyu Yang, Alexander Polyakov, 2018

机译：用SiO2纳米粒子嵌入N-GaN层的InGaN / GaN发光二极管的性能
8. MBE Growth and Properties of GaN, InGaN and GaN/InGaN Quantum Well Structures for Laser Diode Applications [R] . Schetzina, J. F. 2001

机译：用于激光二极管应用的GaN，InGaN和GaN / InGaN量子阱结构的mBE生长和性质

Effect of coalescence layer thickness on the properties of thin-chip InGaN/GaN light emitting diodes with embedded photonic quasi-crystal structures

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