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Temperature-independent slow carrier emission from deep-level defects in p-type germanium

机译:p型锗中深层缺陷引起的与温度无关的慢载流子发射

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摘要

In the deep-level transient spectroscopy (DLTS) spectra of the 3d-transition metals cobalt and chromium in p-type germanium, evidence is obtained that hole emission from defect levels can occur by two parallel paths. Besides classical thermal emission, we observed a second, slower and temperature-independent emission. We show that this extra emission component allows determining unambiguously whether or not multiple DLTS peaks arise from the same defect. Despite similar characteristics, we demonstrate that the origin of the non-thermal emission is not tunnelling but photoionization related to black-body radiation from an insufficiently shielded part of the cryostat.
机译:在p型锗中3d过渡金属钴和铬的深层瞬态光谱(DLTS)光谱中,获得的证据表明缺陷水平的空穴发射可以通过两条平行路径发生。除了经典的热辐射外,我们还观察到了第二种慢速且与温度无关的辐射。我们表明,这种额外的发射分量可以明确确定是否多个DLTS峰源自同一缺陷。尽管具有相似的特征,但我们证明非热辐射的起源不是隧穿,而是与低温恒温器屏蔽不足的黑体辐射相关的光电离。

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