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Deuterium retention in tungsten and tungsten: tantalum alloys exposed to high-flux deuterium plasmas

机译:钨和钨中的氘保留:暴露于高通量氘等离子体的钽合金

摘要

A direct comparison of deuterium retention in samples of tungsten and two grades of tungsten-tantalum alloys-W-1% Ta and W-5% Ta, exposed to deuterium plasmas (ion flux similar to 10(24) m(-2) s(-1), ion energy at the biased target similar to 50 eV) at the plasma generator Pilot-PSI was performed using thermal desorption spectroscopy (TDS). No systematic difference in terms of total retention in tungsten and tungsten-tantalum was identified. The measured retention value for each grade did not deviate by more than 24% from the value averaged over the three grades exposed to the same conditions. No additional desorption peaks appeared in the TDS spectra of the W-Ta samples as compared with the W target, indicating that no additional kinds of traps are introduced by the alloying of W with Ta. In the course of the experiment the same samples were exposed to the same plasma conditions several times, and it is demonstrated that samples with the history of prior exposures yield an increase in deuterium retention of up to 130% under the investigated conditions compared with the samples that were not exposed before. We consider this as evidence that exposure of the considered materials to ions with energy below the displacement threshold generates additional traps for deuterium. The positions of the release peaks caused by these traps are similar for W and W-Ta, which indicates that the corresponding traps are of the same kind.
机译:直接比较暴露于氘等离子体(离子通量类似于10(24)m(-2)s)的钨和两种等级的钨-钽合金-W-1%Ta和W-5%Ta中的氘保留(-1),使用热解吸光谱法(TDS)在等离子体发生器Pilot-PSI上执行了类似于50 eV的偏置目标处的离子能量。在钨和钨钽中的总保留量方面没有系统的差异。与相同条件下三个等级的平均值相比,每个等级的保留值平均值偏差不超过24%。与W目标相比,W-Ta样品的TDS光谱中没有出现其他解吸峰,这表明W与Ta合金化不会引入其他类型的陷阱。在实验过程中,相同的样品多次暴露于相同的血浆条件下,并且证明了具有先前暴露历史的样品与所研究的条件相比,在研究的条件下氘的保留量最多提高了130%。以前没有暴露过。我们认为这是证据,表明所考虑的材料暴露于能量低于位移阈值的离子会产生氘的其他陷阱。对于W和W-Ta,由这些陷阱引起的释放峰的位置相似,这表明相应的陷阱属于同一种类。

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