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Slow ramp - voltage technique for investigation of breakdown voltage distribution in thin plasma nitrided SiO2 films

机译：慢斜坡电压技术研究等离子体氮化SiO2薄膜的击穿电压分布。

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Slavcheva G.;
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年度 1990
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正文语种 {"code":"en","name":"English","id":9}
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1. Breakdown spots propagation in ultra-thin SiO2 films under repetitive ramped voltage stress using conductive atomic force microscopy [J] . Wu YL, Lin ST The journal of physics and chemistry of solids . 2008,第2a3期

机译：使用导电原子力显微镜在重复倾斜电压应力下击穿超薄SiO2薄膜中的击穿点
2. Comparative analysis of breakdown mechanism in thin SiO2 oxide films in metal-oxide-semiconductor structures under the action of heavy charged particles and a pulsed voltage [J] . Zinchenko V. F., Lavrentev K. V., Emelyanov V. V., Technical physics . 2016,第2期

机译：荷重粒子和脉冲电压作用下金属氧化物半导体结构中SiO2薄膜的击穿机理比较分析
3. High breakdown voltage enhancement-mode Mg _xZn _(1-x)O thin-film transistor using CF _4 plasma treatment [J] . Chiu H.-C., Wang H.-C., Lin C.-K., Electrochemical and solid-state letters . 2012,第2期

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4. Observation of Soft-breakdown in Ultra-thin SiO_2 films under Repetitive Ramped Voltage Stress by Using Conductive Atomic Force Microscopy [C] . You-Lin Wu, Shi-Tin Lin, Jin-Chyi Liao NSTI Nanotechnology Conference and Trade Show(NSTI Nanotech 2005) vol.3; 20050508-12; Anaheim,CA(US) . 2005

机译：导电原子力显微镜观察反复倾斜电压应力下超薄SiO_2薄膜的软击穿
5. Understanding material and process limits for high breakdown voltage aluminum gallium nitride/gallium nitride HEMTs. [D] . Dora, Yuvaraj. 2006

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7. Formation of Dielectric Carbon Nitride Thin Films using a Pulsed Laser Ablation Combined with High Voltage Discharge Plasma [O] . 2003

机译：使用脉冲激光烧蚀结合高压放电等离子体形成介电碳氮化物薄膜的形成
8. Improvements in Aluminum Adhesion and Breakdown Voltages of PolyvinylideneFluoride Films Following Exposure to Gas Plasmas [R] . Mammone, R. J., Wade, W. L., Binder, M. 1991

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Slow ramp - voltage technique for investigation of breakdown voltage distribution in thin plasma nitrided SiO2 films

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