We investigate the role of the initial structural condition in silicon surface nanopatterning by low-energy ion beam sputtering. Specifically, we address the influence of the target atomic structure in ripple formation under oblique irradiation by 500 eV Ar+ ions. To this end, we compare results obtained on single-crystal, amorphous, and pre-implanted silicon targets. In spite of the differences in terms of structural order, and in contrast to previous results for medium energies, surface dynamics are found to be quantitatively similar in all these systems. We explain our results through molecular dynamics simulations of the initial irradiation stages, with the conclusion that the damage induced by low-energy ion bombardment overrides the initial atomic state of the silicon target, irrespectively of its preparation method and allows silicon re-using for nanostructuring.
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机译：我们研究了初始结构条件在低能离子束溅射硅表面纳米构图中的作用。具体来说，我们解决了在500 eV Ar +离子倾斜照射下目标原子结构在波纹形成中的影响。为此，我们比较了在单晶，非晶和预植入硅靶材上获得的结果。尽管在结构顺序方面存在差异，并且与以前的中等能量结果相反，但在所有这些系统中发现表面动力学在数量上都相似。我们通过对初始辐照阶段的分子动力学模拟来解释我们的结果，得出的结论是，低能离子轰击引起的损害不考虑硅靶的初始原子态，而与靶的制备方法无关，并且可以将硅重复用于纳米结构。
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