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Observation of nonequilibrium carrier distribution in Ge, Si, and GaAs by terahertz pump–terahertz probe measurements

机译:用太赫兹泵 - 太赫兹探针测量观察Ge,si和Gaas中的非平衡载流子分布

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摘要

We compare the observed strong saturation of the free-carrier absorption in n-type semiconductors at 300 K in the terahertz (THz) frequency range when single-cycle pulses with intensities up to 150 MW/cm are used. In the case of germanium, a small increase in the absorption occurs at intermediate THz pulse energies. The recovery of the free-carrier absorption was monitored by time-resolved THz pump–THz probe measurements. At short probe delay times, the frequency response of germanium cannot be fitted by the Drude model. We attribute these unique phenomena of Ge to dynamical overpopulation of the high mobility Γ conduction-band valley.
机译:当使用强度高达150 singleMW / cm的单周期脉冲时,我们比较了在太赫兹(THz)频率范围内在300 K时n型半导体中观察到的自由载流子吸收的强烈饱和。在锗的情况下,在中等太赫兹脉冲能量下吸收的增加很小。通过时间分辨THz泵–THz探针测量监测自由载流子吸收的恢复。在较短的探头延迟时间下,Drude模型无法拟合锗的频率响应。我们将Ge的这些独特现象归因于高迁移率Γ导带谷的动态人口过多。

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