Modeling and simulation of fault tolerant properties of quantum-dot cellular automata devices

摘要

I present a theoretical study of fault tolerant properties in Quantum-dot Cellular Automata (QCA) devices. The study consists of modeling and simulation of various possible manufacturing, fabrication and operational defects. My focus is to explore the effects of temperature and dot displacement defects at the cell level of various QCA devices. Results of simple devices such as binary wire, logical gates, inverter, cross-over and XOR will be presented. A Hubbard-type Hamiltonian and the inter-cellular Hartree approximation have been used for modeling the QCA devices. Random distribution has been used for defect simulations. In order to show the operational limit of a device, defect parameters have been defined and calculated. Results show fault tolerance of a device is strongly dependent on the temperature as well as on the manufacturing defects.