Al2O3 thin films find a no. of applications in optoelectronics, sensors and tribol. In this paper, we report the prepn. and characterization of alumina films prepd. by both electron beam evapn. and spray pyrolysis method. The elec. properties of alumina films were detd. by measuring (C-V) and (I-V) characteristics in a metal oxide semiconductor (MOS) structure. A relative dielec. const. (εr) of 9.6 for spray pyrolyzed films and 8.3 for evapd. films was obtained. The breakdown elec. field was around 5 and 1 MV/cm, resp. for spray pyrolyzed and evapd. films. The refractive index of alumina films by evapn. was 1.71 and 1.61 at 275 and 500 nm, resp. The optical band gap of spray pyrolyzed films deposited at 300° was in the range of 5.40-5.55 eV. Structural, elemental anal. and stoichiometry of the films was studied by scanning electron microscope (SEM), energy dispersive x-ray anal. (energy-dispersive x-ray anal.), Auger electron spectroscopy (AES) and Rutherford back scattering (RBS) spectra.
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