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Fault modeling of chirality variation for carbon nanotube field effect transistor and its effect on circuits performance

机译:碳纳米管场效应晶体管手性变化的故障建模及其对电路性能的影响

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摘要

Carbon Nanotube (CNT) is one of the promising materials to be discovered that can replace silicon as the material for nano scale electrical switch. CNTFET have been shown to have better performance, able to operate on shorter channel length and drive a lower power envelop as it MOSFET counterpart. The conductivity of CNT is determined by the chirality of the tube, which determines the diameter of the CNT. However, the chirality cannot be fully controlled directly during manufacturing of the material. Much efforts have been concentrated to have tight manufacturing control to have constant chirality. The effect of chirality variation is in the diameter of the CNT tube which is responsible for the current carrying capacity of the CNT. Non-uniform chirality will cause degradation in performance of logic circuits. The variation in chirality can be viewed as faults. For that reason, there is a crucial need to model defects introduced during manufacturing process. Current defect models are purely based on simple resistors to mimic stuck at 0 and stuck at 1 which does not answer the basic question which is: “what is the optimum process control should be that so that even with variations in chirality, the circuit could still function? ”. The objective of this project is first, to model the defect of CNT based on current manufacturing issues, so that designers and manufacturer could simply predict the behavior of logic circuit. Second, is to analyze logic circuit function with variations in chirality. Based on this result, a simple model is produced. The research methodology adopted in this project is analyzing the effect of changes in chirality and model it as a simple resistor in series with the fault free circuit. The work is based on simulation using HSPICE and the CNT is from Stanford CNT model. The result indicates that circuits could still function despite some changes in chirality which means manufacture still has some acceptable margin of errors
机译:碳纳米管(CNT)是一种有前途的材料,可以替代硅作为纳米级电气开关的材料。事实证明,CNTFET具有更好的性能,能够在更短的沟道长度上运行,并驱动与MOSFET相对应的低功耗封装。 CNT的导电性取决于管的手性,而手性决定了CNT的直径。但是,不能在材料的制造过程中直接完全控制手性。为了保持恒定的手性,已经集中了很多努力来进行严格的制造控制。手性变化的影响在于CNT管的直径,该直径决定了CNT的载流能力。手性不均匀会导致逻辑电路性能下降。手性的变化可以看作是缺陷。因此,迫切需要对制造过程中引入的缺陷进行建模。当前的缺陷模型完全基于简单的电阻器来模拟卡在0和卡在1的情况,这无法回答以下基本问题:“最佳过程控制应该是什么,以便即使手性发生变化,电路仍然可以功能? ”。该项目的目标是首先基于当前的制造问题对CNT的缺陷进行建模,以便设计人员和制造商可以简单地预测逻辑电路的行为。其次,分析手性变化的逻辑电路功能。基于此结果,生成了一个简单的模型。该项目采用的研究方法是分析手性变化的影响,并将其建模为与无故障电路串联的简单电阻。这项工作是基于使用HSPICE进行的模拟,而CNT来自Stanford CNT模型。结果表明,尽管手性发生了一些变化,电路仍可以正常工作,这意味着制造商仍具有一定的可接受误差范围

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    Othman Mohammad Faizi;

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  • 年度 2015
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