A sol–gel technique being simple, low cost and application oriented has been used to synthesize doped and un-doped mullite sols. These films have been spin-coated onto copper substrates. Effect of boron doping on the transformation kinetics of mullite was studied by preparing two sols with ratio Al/Si/B = 3/1/0 and Al/Si/B = 3/1/0.5. Surface morphology of thermally stable films showed uniformity in doped and un-doped samples. X-ray diffractometer results revealed orthorhombic mullite formation from both sols at a temperature of 500 °C for un-doped and at 350 °C for doped mullite films. Small crystallite size ~11 nm and low dielectric value ~5.84 (at 3 MHz) were observed in boron-doped films. Un-doped mullite films also showed relatively low dielectric constant, ~6.36, as compared to the previously reported values. The stoichiometry of films was confirmed by EDX and spark source mass spectrometry.
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机译:一种简单,低成本且面向应用的溶胶凝胶技术已被用于合成掺杂和未掺杂的莫来石溶胶。这些薄膜已旋涂到铜基板上。通过制备两种Al / Si / B = 3/1/0和Al / Si / B = 3/1 / 0.5的溶胶研究了硼掺杂对莫来石相变动力学的影响。热稳定膜的表面形态在掺杂和未掺杂样品中显示出均匀性。 X射线衍射仪的结果表明,两种溶胶在500°C的温度下对未掺杂的正交晶莫来石形成,而在350°C下的掺杂莫来石膜则形成正交晶。在掺硼薄膜中观察到了微晶尺寸〜11 nm和低介电值〜5.84(在3 MHz下)。与先前报道的值相比,未掺杂的莫来石膜还显示出相对较低的介电常数〜6.36。膜的化学计量通过EDX和火花源质谱法确认。
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