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2162-8726/2013/2(6)/H23/3/$31.00 © The Electrochemical Society Cs-Corrected STEM Observation and Atomic Modeling of Grain Boundary Impurities of Very Narrow Cu Interconnect

机译：2162-8726 / 2013/2（6）/H23/3/$31.00©电化学学会Cs校正的极窄Cu互连晶界杂质的sTEm观察和原子模拟

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Takatoshi Nagano; Z Kunihiro Tamahashi; Yasushi Sasajima; Jin Onuki;
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1. Cs-Corrected STEM Observation and Atomic Modeling of Grain Boundary Impurities of Very Narrow Cu Interconnect [J] . Takatoshi Nagano, Kunihiro Tamahashi, Yasushi Sasajima ECS Electrochemistry Letters . 2013,第6期

机译：极窄铜互连线的Cs校正STEM观察和晶粒边界杂质的原子建模
2. Cs-Corrected STEM Observation and Atomic Modeling of Grain Boundary Impurities of a Very Narrow Cu Interconnect [J] . The Electrochemical Society interface group The Electrochemical Society interface . 2013,第3期

机译：Cs校正的非常窄的Cu互连线的晶粒边界杂质的CTEM校正STEM观察和原子建模
3. Role of Impurity Segregation into Cu/Cap Interface and Grain Boundary in Resistivity and Electromigration of Cu/Low-fr Interconnects [J] . Shinji Yokogawa, Yumi Kakuhara Japanese journal of applied physics . 2011,第5Issue2期

机译：杂质在Cu / Cap界面和晶界中的偏析在Cu / Low-fr互连线的电阻率和电迁移中的作用
4. Role of Impurity Segregation to Cu/Cap Interface and Grain Boundary on Resistivity and Electromigration in Cu/low-k interconnects [C] . S. Yokogawa, Y. Kakuhara Advanced Metallization Conference . 2010

机译：杂质隔离对Cu /帽界面的作用和Cu / Low-K互连电阻率和电迁移的作用
5. Topological Impurity Segregation at Faceted Silicon Grain Boundaries Studied by Correlative Atomic-Resolution STEM and APT [O] . Liebscher, C., Stoffers, A., Cojocaru-Mirédin, O., 2016

机译：利用相关原子分辨率sTEm和apT研究了刻面硅晶界的拓扑杂质偏析

2162-8726/2013/2(6)/H23/3/$31.00 © The Electrochemical Society Cs-Corrected STEM Observation and Atomic Modeling of Grain Boundary Impurities of Very Narrow Cu Interconnect

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