The growth and characterization of nanostructured zinc antimonides (Zn4Sb3) thin films are reported in this work. The nanostructured Zn4Sb3 thin films were prepared by RF magnetron sputtering using a single sputtering target made from a stoichiometric Zn4Sb3. The range of growth parameters were determined for substrate temperature (50oC – 150oC), deposition time (600 s – 1200 s), argon flow rate (5 mL min-1 – 20 mL min-1) and RF power (50 W – 125 W). The effects of manipulated growth parameters on surface morphology were investigated. XRD, EDX, FESEM and AFM were utilized to characterize the deposited thin films. Zn and Sb peaks are not reflected in the XRD spectra. The spectra also show that the deposited thin films are in amorphous form. Due to limitation on capturing the appearance of element Zn and Sb, EDX characterization was performed. It was confirmed that the deposited thin films contain Zn and Sb elements based on EDX analyses. Based on FESEM analyses, grain size and thickness of deposited thin films were captured between ~11 nm – 15 nm and ~ 45 nm – 60 nm, respectively. AFM analyses showed that the variation of growth parameters have strong influence on the formation of the nanostructured thin films. It was found that the grain diameter, average roughness and grain density of the deposited thin films obtained were in the range 19.85 nm – 43.07 nm, 1.997 × 10-2 nm – 14.877 × 10-2 nm and 3.942 × 1010 cm-2 – 11.691 × 1010 cm-2, respectively.
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机译：这项工作报道了纳米结构的锑化锌（Zn4Sb3）薄膜的生长和表征。使用由化学计量的Zn4Sb3制成的单个溅射靶，通过RF磁控溅射来制备纳米结构的Zn4Sb3薄膜。确定了生长参数的范围，包括基板温度（50oC – 150oC），沉积时间（600 s – 1200 s），氩气流速（5 mL min-1 – 20 mL min-1）和RF功率（50 W – 125） W）。研究了受控生长参数对表面形态的影响。 XRD，EDX，FESEM和AFM用于表征沉积的薄膜。 Zn和Sb峰未反映在XRD光谱中。光谱还显示沉积的薄膜为非晶形式。由于捕获元素Zn和Sb的外观受到限制，因此进行了EDX表征。根据EDX分析，证实了沉积的薄膜包含Zn和Sb元素。根据FESEM分析，分别捕获了约11 nm – 15 nm和〜45 nm – 60 nm的晶粒尺寸和沉积薄膜厚度。原子力显微镜分析表明，生长参数的变化对纳米结构薄膜的形成有很大影响。结果发现，所获得的沉积薄膜的粒径，平均粗糙度和颗粒密度在19.85 nm – 43.07 nm，1.997×10-2 nm – 14.877×10-2 nm和3.942×1010 cm-2 – 11.691×1010 cm-2。
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