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Improving Light Output Power of the GaN-Based Vertical-Injection Light-Emitting Diodes by Mg Implanted Current Blocking Layer

机译：用mg注入电流阻挡层提高GaN基垂直注入发光二极管的光输出功率

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Min-an Tsai; Peichen Yu; J. R. Chen; J. K. Huang; C. H. Chiu; H. C. Kuo; Senior Member; T. C. Lu; S. H. Lin; S. C. Wang; Life Member;
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1. Improving the output power of GaN-based light-emitting diode using Ag particles embedded within a SiO_2 current blocking layer [J] . Jae-Seong Park, Jaecheon Han, Tae-Yeon Seong Superlattices and microstructures . 2015,第JULa期

机译：使用嵌入SiO_2电流阻挡层中的Ag颗粒提高GaN基发光二极管的输出功率
2. Enhancement of Light Output Power of GaN-Based Light-Emitting Diodes by a Reflective Current Blocking Layer [J] . Kao C.C., Su Y.K., Lin C.L. Photonics Technology Letters, IEEE . 2011,第14期

机译：反射电流阻挡层增强GaN基发光二极管的光输出功率
3. Current Spreading and Blocking Designs for Improving Light Output Power from the Vertical-Structured GaN-Based Light-Emitting Diodes [J] . Chen T.-M., Wang S.-J., Uang K.-M., IEEE Photonics Technology Letters . 2008,第9期

机译：用于改善垂直结构的基于GaN的发光二极管的光输出功率的电流扩散和阻挡设计
4. Improvement in the light output power of GaN-based light emitting diodes by one-step current blocking design [C] . Tsai C. F., Su Y. K., Lin C. L. International Semiconductor Device Research Symposium;ISDRS '09 . 2009

机译：通过一步电流阻挡设计提高GaN基发光二极管的光输出功率
5. Optically functional structures on GaN-based light-emitting diodes for light-extraction efficiency enhancement and emission pattern control. [D] . Ma, Ming. 2013

机译：GaN基发光二极管上的光学功能结构，用于提高光提取效率和控制发射模式。
6. Enhanced performance of nitride-based ultraviolet vertical-injection light-emitting diodes by non-insulation current blocking layer and textured surface [O] . Yen Chih Chiang, Bing Cheng Lin, Kuo Ju Chen, 2014

机译：非绝缘电流阻挡层和带纹理的表面增强了氮化物基紫外垂直注入发光二极管的性能
7. Enhanced performance of nitride-based ultraviolet vertical-injection light-emitting diodes by non-insulation current blocking layer and textured surface [O] . Yen Chiang, Bing Lin, Kuo Chen, 2015

机译：非绝缘电流阻挡层和带纹理的表面增强了氮化物基紫外垂直注入发光二极管的性能

Improving Light Output Power of the GaN-Based Vertical-Injection Light-Emitting Diodes by Mg Implanted Current Blocking Layer

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