The channel mobility degradation in a nanoscale metal-oxide-semiconductor field effect transistor due to injection from the ballistic contacts

摘要

The ballistic mobility degradation is shown to originate from nonstationary (transient) transport in response to the ohmic electric field. The source and drain reservoirs launch electrons into the channel with injection velocity transiting the channel with finite ballisticity defined as the probability of a collision-free flight. The distinction is made between the ballistic mean free path and that present in a long channel. The results are in excellent agreement with those obtained from Monte Carlo procedures and experiments.