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Compositional studies of InGaN epilayers and magnesium-doped GaN grown by MOVPE, using wavelength dispersive X-ray spectrometry

机译：使用波长色散X射线光谱法研究MOVPE生长的InGaN外延层和掺杂镁的GaN的组成

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Deatcher C. J.; Liu C.; Cheong M.G.; Watson I.M.; Martin R. W.; Smith L. M.; Rushworth S.; Pereira S.;
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1. Plasma-assisted MBE of InGaN epilayers with atomically smooth and nanocolumnar morphology, grown on MOVPE GaN/Al_2O_3 templates [J] . V.N. Jmerik, A.M. Mizerov, T.V. Shubina, Journal of Crystal Growth . 2007,第Apr期

机译：在MOVPE GaN / Al_2O_3模板上生长的具有原子光滑和纳米柱状形态的InGaN外延层的等离子体辅助MBE
2. Impact of Thin LT-GaN Cap Layers on the Structural and Compositional Quality of MOVPE Grown InGaN Quantum Wells Investigated by TEM [J] . F. Ivaldi, S. Kret, A. Szczepanska, Acta Physica Polonica . 2011,第5期

机译：TEM研究了LT-GaN薄覆盖层对MOVPE生长的InGaN量子阱结构和组成质量的影响
3. Thickness measurement of semiconductor thin films by energy dispersive X-ray fluorescence benchtop instrumentation: Application to GaN epilayers grown by molecular beam epitaxy [J] . I. Queralt, J. Ibanez, E. Margin Spectrochimica Acta, Part B. Atomic Spectroscopy . 2010,第7期

机译：能量色散X射线荧光台式仪器测量半导体薄膜的厚度：在分子束外延生长的GaN外延层中的应用
4. Study of near-threshold gain mechanisms in mocvd-grown GaN epilayers and InGaN/GaN heterostructures [C] . S. Bidnyk, T. J. Schmidt, B. D. Little, Symposium on Wide-Bandgap Semiconductors for High-Power, High-Frequency and High-Temperature Applications-1999 held April 5-8, 1999, San Francisco, California, U.S.A. . 1999

机译：运动生长的GaN外延层和InGaN / GaN异质结构中的近阈值增益机制研究
5. Determination via luminescence spectroscopy and x-ray diffraction of the strain and composition of GaN and Al(x)Ga(1-x)N thin films grown on 6H-SiC(0001) substrates. [D] . Perry, William George. 1997

机译：通过发光光谱和X射线衍射测定在6H-SiC（0001）衬底上生长的GaN和Al（x）Ga（1-x）N薄膜的应变和组成。
6. A study of the optical and polarisation properties of InGaN/GaN multiple quantum wells grown on a-plane and m-plane GaN substrates [O] . Dmytro Kundys, Danny Sutherland, Matthew J. Davies, 2016

机译：在a平面和m平面GaN衬底上生长的InGaN / GaN多量子阱的光学和偏振特性的研究
7. Assessment of the short and long range homogeneity of MOVPE-grown InGaN epilayers [O] . Fornari R., Bosi M., Avella M., 2004

机译：评估MOVPE生长的InGaN外延层的短期和长期均质性

Compositional studies of InGaN epilayers and magnesium-doped GaN grown by MOVPE, using wavelength dispersive X-ray spectrometry

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