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Formation of Radiation-induced Defects in Si Crystals Irradiated with Electrons at Elevated Temperatures

机译：高温下电子辐照si晶体中辐射诱导缺陷的形成

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V. P. Markevich; A. R. Peaker; S. B. Lastovskii; V. E. Gusakov;
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年度 2015
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1. Formation of Radiation-induced Defects in Si Crystals Irradiated withElectrons at Elevated Temperatures [J] . V.P. Markevich, A.R. Peaker, S.B. Lastovskii, Diffusion and Defect Data. Solid State Data, Part B. Solid State Phenomena . 2010,第Null期

机译：高温下电子辐照硅晶体中辐射诱导缺陷的形成
2. Domain structure formation by electron beam irradiation in lithium niobate crystals at elevated temperatures [J] . Chezganov D. S., Vlasov E. O., Pashnina E. A., Applied Physics Letters . 2019,第9期

机译：高温下铌酸锂晶体中电子束辐照形成畴结构
3. Formation and Dynamics of Electron-Irradiation-Induced Defects in Hexagonal Boron Nitride at Elevated Temperatures (vol 16, pg 7142, 2016) [J] . Thang Pham, Gibb Ashley L., Li Zhenglu, Nano letters . 2017,第6期

机译：升高温度下六边形氮化物中电子照射诱导缺陷的形成和动力学（Vol 16，PG 7142,2016）
4. Formation of Radiation-induced Defects in Si Crystals Irradiated with Electrons at Elevated Temperatures [C] . V. P. Markevich, A. R. Peaker, S. B. Lastovskii, International Meeting on Gettering and Defect Engineering in Semiconductor Technology . 2010

机译：在高温下用电子照射的Si晶体中形成辐射诱导的缺陷
5. Micro-mechanisms of Surface Defects Induced on Aluminum Alloys during Plastic Deformation at Elevated Temperatures. [D] . Gali, Olufisayo A. 2017

机译：高温塑性变形过程中铝合金表面缺陷的微观机制。
6. Electron irradiation induced amorphous SiO2 formation at metal oxide/Si interface at room temperature; electron beam writing on interfaces [O] . S. Gurbán, P. Petrik, M. Serényi, -1

机译：室温下电子辐照在金属氧化物/ Si界面上形成无定形SiO2；在界面上写入电子束
7. Transmission electron microscopy study in-situ of radiation-induced defects in copper at elevated temperatures [O] . Daulton, T.L., Kirk, M.A., Rehn, L.E. 1996

机译：透射电子显微镜原位研究铜在高温下辐射引起的缺陷
8. Transmission electron microscopy study in-situ of radiation-induced defects in copper at elevated temperatures [R] . Daulton, T. L., Kirk, M. A., Rehn, L. E. 1996

机译：透射电子显微镜原位研究铜在高温下辐射引起的缺陷

Formation of Radiation-induced Defects in Si Crystals Irradiated with Electrons at Elevated Temperatures

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