首页> 外文OA文献 >The Role of Pre-anneal Conditions on the Microstructure of Ge+ Implanted Si after High Temperature Milli-second Flash Annealing

【2h】

The Role of Pre-anneal Conditions on the Microstructure of Ge+ Implanted Si after High Temperature Milli-second Flash Annealing

机译：预退火条件对高温毫秒闪光退火后Ge +注入si微结构的影响

页面导航

著录项
相似文献
相关主题

著录项

作者
K. S. Jones; S. P. Crane; C. E. Ross; D. Downey; E. Arevalo; S. Mccoy; J. Gelpey;
展开▼
作者单位

展开▼
年度 2015
总页数
原文格式 PDF
正文语种
中图分类

相似文献

外文文献
中文文献
专利

1. The roles of hydrogen in the diamond/amorphous carbon phase transitions of oxygen ion implanted ultrananocrystalline diamond films at different annealing temperatures [J] . X. J. Hu, X. H. Chen, J. S. Ye AIP Advances . 2012,第4期

机译：氢在不同退火温度下氧离子注入超纳米晶金刚石膜的金刚石/非晶碳相变中的作用
2. Visible cathodoluminescence from Eu-implanted single- and polycrystal c-BN annealed under high-temperature, high-pressure conditions [J] . Ulrich Vetter, Hans Hofsass, Takashi Taniguchi Applied Physics Letters . 2004,第21期

机译：高温高压条件下退火的Eu植入的单晶和多晶c-BN的可见阴极发光
3. Role of silicon content and final annealing temperature on microtexture and microstructure development in non-oriented silicon steel [J] . D. Moseley, Y. Hu, V. Randle Materials Science and Engineering. A, Structural Materials . 2005,第1a2期

机译：硅含量和最终退火温度对无取向硅钢组织和组织发展的影响
4. The role of pre-anneal conditions on the microstructure of Ge+ implanted Si after high temperature milli-second flash annealing [C] . Jones K.S., Crane S.P., Ross C.E., Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on . -1

机译：退火条件对高温毫秒级快速退火后Ge + 注入的Si微观结构的影响
5. Boron activation and diffusion in silicon for varying initial process conditions during flash-assist rapid thermal annealing. [D] . Camillo-Castillo, Renata A. 2006

机译：在快速辅助快速热退火过程中，硼的活化和扩散会改变硅的初始工艺条件。
6. Microstructure and Dielectric Properties of LPCVD/CVI-SiBCN Ceramics Annealed at Different Temperatures [O] . Jianping Li, Mingxi Zhao, Yongsheng Liu, 2017

机译：LPCVD / CVI-SiBCN陶瓷在不同温度下退火的组织和介电性能
7. Effects of Deposition Temperature and Annealing Conditions on Flexibility of Flash-Evaporated TiNi Alloy Film [O] . Takashi MINETA, Haruka KUBO, Daisuke MAKIGUCHI, 2008

机译：沉积温度和退火条件对闪蒸TINI合金薄膜柔韧性的影响
8. Implantation activation annealing of Si-implanted gallium nitride at temperatures > 1,100 C [R] . 1997

机译：在> 1,100℃的温度下对si注入的氮化镓进行注入活化退火

The Role of Pre-anneal Conditions on the Microstructure of Ge+ Implanted Si after High Temperature Milli-second Flash Annealing

著录项

相似文献

相关主题

期刊订阅