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Boron and Phosphorus Implantation Induced Electrically Active Defects in p-type Silicon

机译：硼和磷注入诱导p型硅中的电活性缺陷

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Jayantha Senawiratne; Jeffery S. Cites; James G. Couillard; Carlo A. Kosik Williams; Patrick G. Whiting;
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1. Boron and Phosphorus Implantation Induced Electrically Active Defectsin p-type Silicon [J] . Jayantha Senawiratne, Jeffery S. Cites, James G. Couillard, Diffusion and Defect Data. Solid State Data, Part B. Solid State Phenomena . 2010,第Null期

机译：硼和磷注入在p型硅中诱导电活性缺陷
2. Defects in Annealed 1.5 MeV Boron Implanted p-type Silicon [J] . J.Y. Dai, K.K. Ong, D.Z. Chi, Journal of Electronic Materials . 2001,第7期

机译：退火的1.5 MeV硼注入的p型硅中的缺陷
3. The residual electrically active damage in low energy boron implanted silicon: rapid thermal annealing and implant mass effects [J] . L. Kaabi, J. Ben Brahim, B. Remaki, The European physical journal. Applied physics . 1998,第1期

机译：低能硼注入的硅中残留的电活性损伤：快速热退火和注入质量效应
4. Boron and Phosphorus Implantation Induced Electrically Active Defects in p-type Silicon [C] . Jayantha Senawiratne, Jeffery S. Cites, James G. Couillard, International Meeting on Gettering and Defect Engineering in Semiconductor Technology . 2010

机译：硼和磷植入诱导p型硅中的电活性缺陷
5. Electrical and optical characterization of intrinsic and ion-implantation induced defects in 6-hydrogen-silicon carbide and 4-hydrogen-silicon carbide. [D] . Scott, Michael Buryl. 1999

机译：6氢碳化硅和4氢碳化硅中本征和离子注入引起的缺陷的电学和光学表征。
6. Boron-Incorporating Silicon Nanocrystals Embedded in SiO2: Absence of Free Carriers vs. B-Induced Defects [O] . Daniel Hiller, Julian López-Vidrier, Sebastian Gutsch, -1

机译：嵌入SiO2中的掺硼硅纳米晶体：自由载流子与B诱导缺陷的缺失
7. Light-induced boron-oxygen defect generation in compensated p-type Czochralski silicon [O] . D. Macdonald, F. Rougieux, A. Cuevas, 2009

机译：补偿P型Czochralski硅的光诱导的硼 - 氧缺陷产生

Boron and Phosphorus Implantation Induced Electrically Active Defects in p-type Silicon

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