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MEASUREMENT OF COPPER IN P-TYPE SILICON USING CHARGE-CARRIER LIFETIME METHODS

机译：用电荷载体寿命法测量p型硅中的铜

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M. Yli-koski; H. Savin; E. Saarnilehto; A. Haarahiltunen; J. Sinkkonen; G. Berenyi; T. Pavelka;
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1. Detailed Investigation of Surface Passivation Methods for Lifetime Measurements on P-Type Silicon Wafers [J] . Pollock K. L., Junge J., Hahn G. Photovoltaics, IEEE Journal of . 2012,第1期

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2. Recombination activity of light-activated copper defects in p-type silicon studied by injection- and temperature-dependent lifetime spectroscopy [J] . Alessandro lnglese, Jeanette Lindroos, Henri Vahlman, Journal of Applied Physics . 2016,第12期

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3. Detection of low-level copper contamination in p-type silicon by means of microwave photoconductive decay measurements [J] . Yli-Koski M., Palokangas M., Haarahiltunen A., Journal of Physics. Condensed Matter . 2002,第48期

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4. MEASUREMENT OF COPPER IN P-TYPE SILICON USING CHARGE-CARRIER LIFETIME METHODS [C] . M. Yli-Koski, H. Savin, E. Saarnilehto, International Meeting on Gettering and Defect Engineering in Semiconductor Technology . 2006

机译：使用电荷载体寿命方法测量p型硅中的铜
5. Charged Silicon Nitride Films: Field-Effect Passivation of Silicon Solar Cells and a Novel Characterization Method through Lifetime Measurements. [D] . Yang, Qun. 2014

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6. Reconstructing charge-carrier dynamics in porous silicon membranes from time-resolved interferometric measurements [O] . Wei He, Rihan Wu, Igor V. Yurkevich, -1

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7. Detailed Investigation of Surface Passivation Methods for Lifetime Measurements on P-Type Silicon Wafers [O] . Kevin L. Pollock, Johannes Junge, Giso Hahn 2012

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MEASUREMENT OF COPPER IN P-TYPE SILICON USING CHARGE-CARRIER LIFETIME METHODS

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