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A Bottom-gate Depletion-mode Nanowire Field Effect Transistor (NWFET) Model Including a Schottky Diode Model

机译：包括肖特基二极管模型的底栅耗尽型纳米线场效应晶体管（NWFET）模型

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Y. S. Yu; S. H. Lee; D. S. Kim; Y. C. Jung; S. W. Hwang; D. Ahn;
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年度 2008
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1. A Bottom-gate Depletion-mode Nanowire Field Effect Transistor (NWFET)Model Including a Schottky Diode Model [J] . Y. S. Yu, S. H. LEE, D. S. KIM, Journal of the Korean Physical Society . 2009,第3aPta1期

机译：包括肖特基二极管模型的底栅耗尽型纳米线场效应晶体管（NWFET）模型
2. A compact analytical current conduction model for a depletion-mode n-type nanowire field-effect transistor with a bottom-gate structure [J] . Yun Seop Yu, Se Han Lee, Jung Hyun Oh, Semiconductor science and technology . 2008,第3期

机译：具有底栅结构的耗尽型n型纳米线场效应晶体管的紧凑型分析电流传导模型
3. Analytic Modeling of a Depletion-Mode Cylindrical Surrounding-Gate Nanowire Field-Effect Transistor [J] . Yun Seop Yu, Hyung-Kun Park Journal of nanoscience and nanotechnology . 2012,第7期

机译：耗尽型圆柱围栅纳米线场效应晶体管的解析模型
4. Modeling of transport behavior of the ballistic Silicon nanowire gate-all-around field-effect-transistors (Si NWFETs) with Si/SiO2 interface roughness [C] . Chowdhury Basudev Nag, Chattopadhyay Sanatan 2012 5th International Conference on Computers and Devices for Communication . 2012

机译：具有Si / SiO2界面粗糙度的弹道硅纳米线全栅场效应晶体管（Si NWFET）的传输行为建模
5. Fabrication, characterization, and modeling of organic capacitors, Schottky diodes, and field effect transistors. [D] . Zhu, Mo. 2004

机译：有机电容器，肖特基二极管和场效应晶体管的制造，表征和建模。
6. Physical Modeling of Gate-Controlled Schottky Barrier Lowering of Metal-Graphene Contacts in Top-Gated Graphene Field-Effect Transistors [O] . Ling-Feng Mao, Huansheng Ning, Zong-Liang Huo, -1

机译：顶部栅极石墨烯场效应晶体管中金属石墨烯触点的栅极控制肖特基势垒降低的物理模型
7. Compact Model of a pH Sensor with Depletion-Mode Silicon-Nanowire Field-Effect Transistor [O] . Yun Seop Yu 2014

机译：具有耗尽模式硅纳米线场效应晶体管的pH传感器的紧凑型模型

A Bottom-gate Depletion-mode Nanowire Field Effect Transistor (NWFET) Model Including a Schottky Diode Model

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