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Digital-to-analog and analog-to-digital conversion with metal oxide memristors for ultra-low power computing

机译：采用金属氧化物忆阻器进行数模转换和模数转换，实现超低功耗计算

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Ligang Gao; Farnood Merrikh-bayat; Fabien Alibart; Xinjie Guo; Brian D. Hoskins; Kwang-ting Cheng; Dmitri B. Strukov;
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年度 2015
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1. Highly selective and ultra-low power consumption metal oxide based hydrogen gas sensor employing graphene oxide as molecular sieve [J] . Florian Rasch, Vasile Postica, Fabian Schuett, Sensors and Actuators . 2020,第Octa期

机译：高度选择性和超低功耗金属氧化物基氢气传感器，采用石墨烯氧化物作为分子筛
2. Advocating Noise as an Agent for Ultra-Low Energy Computing: Probabilistic Complementary Metal-Oxide-Semiconductor Devices and Their Characteristics [J] . Pinar Korkmaz, Bilge E. S. Akgul, Krishna V. Palem, Japanese Journal of Applied Physics. Part 1, Regular Papers, Brief Communications & Review Papers . 2006,第4B期

机译：倡导噪声作为超低能耗计算的代理：概率互补金属氧化物半导体器件及其特性
3. Ultra-Low Power High Temperature and Radiation Hard Complementary Metal-Oxide-Semiconductor (CMOS) Silicon-on-Insulator (SOI) Voltage Reference [J] . Denis Flandre, El Hafed Boufouss, Laurent A. Francis, Sensors . 2013,第12期

机译：超低功率高温和辐射硬互补金属氧化物半导体（CMOS）绝缘体上硅（SOI）电压基准
4. Digital-to-analog and analog-to-digital conversion with metal oxide memristors for ultra-low power computing [C] . Gao Ligang, Merrikh-Bayat Farnood, Alibart Fabien, 2013 IEEE/ACM International Symposium on Nanoscale Architectures . 2013

机译：利用金属氧化物忆阻器进行数模和模数转换，用于超低功耗计算
5. Ultra-low Power Room TemperatureMetal Oxide Gas Sensors: A Study in Sensitivity, Selectivity and Reliability [D] . Mills, Steven Christopher. 2017

机译：超低功率室温度氧化氧化物气体传感器：敏感性，选择性和可靠性研究
6. Ultra-Low Power High Temperature and Radiation Hard Complementary Metal-Oxide-Semiconductor (CMOS) Silicon-on-Insulator (SOI) Voltage Reference [O] . El Hafed Boufouss, Laurent A. Francis, Valeriya Kilchytska, 2013

机译：超低功率高温和辐射硬互补金属氧化物半导体（CMOS）绝缘体上硅（SOI）电压基准
7. Digital-to-analog and analog-to-digital conversion with metal oxide memristors for ultra-low power computing [O] . GAO L.G., MERRIKH-BAYAT F., Alibart F., 2013

机译：利用金属氧化物忆阻器进行数模和模数转换，用于超低功耗计算
8. NREL Highlights: Improving PbS Quantum Dot Solar Cell Power Conversion Efficiency to an NREL-Certified 4.4 Percetn: Transition Metal Oxide Improves Overall Efficiency and Maintain Performance with Inexpensive Metals. [R] . 2012

机译：NREL亮点：将pbs量子点太阳能电池功率转换效率提高到NREL认证的4.4 percetn：过渡金属氧化物通过廉价金属提高整体效率并保持性能。

Digital-to-analog and analog-to-digital conversion with metal oxide memristors for ultra-low power computing

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