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Analysis of Energy Quantization Effects on Single-Electron Transistor Circuits

机译：单电子晶体管电路的能量量化效应分析

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Surya Shankar Dan; Santanu Mahapatra;
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年度 2015
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1. Analysis of Energy Quantization Effects on Single-Electron Transistor Circuits [J] . Dan S. S., Mahapatra S. Nanotechnology, IEEE Transactions on . 2010,第1期

机译：单电子晶体管电路的能量量化效应分析
2. Power Consumption of Hybrid Circuits of Single-Electron Transistors and Complementary Metal-Oxide-Semiconductor Field-Effect Transistors [J] . Ken Uchida, Junji Koga, Ryuji Ohba IEICE Transactions on Electronics . 2001,第8期

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3. A single-electron stochastic associative processing circuit robust to random background-charge effects and its structure using nanocrystal floating-gate transistors [J] . Yamanaka T., Morie T. Nanotechnology . 2000,第3期

机译：具有随机背景电荷效应的鲁棒性单电子随机关联处理电路及其使用纳米晶体浮栅晶体管的结构
4. A model for energy quantization of single-electron transistor below 10nm [C] . Xiaobao Chen, Zuocheng Xing, Bingcai Sui 2011 IEEE 9th International Conference on ASIC . 2011

机译：10nm以下单电子晶体管能量量化模型
5. Design and analysis of single-electron technology neural-inspired gates and arithmetic circuits. [D] . Sulieman, Mawahib Hussein. 2004

机译：单电子技术神经启发门和算术电路的设计和分析。
6. Three-input gate logic circuits on chemically assembled single-electron transistors with organic and inorganic hybrid passivation layers [O] . Yutaka Majima, Guillaume Hackenberger, Yasuo Azuma, 2017

机译：具有有机和无机混合钝化层的化学组装单电子晶体管上的三输入门逻辑电路
7. A single-electron stochastic associative processing circuit robust to random background-charge effects and its structure using nanocrystal floating-gate transistors [O] . Yamanaka T, Morie Takashi, Nagata M, 2000

机译：对随机背景电荷效应具有鲁棒性的单电子随机关联处理电路及其结构，采用纳米晶体浮栅晶体管

Analysis of Energy Quantization Effects on Single-Electron Transistor Circuits

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