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Control of Threshold Voltage of AlGaN/GaN HEMTs by Fluoride-Based Plasma Treatment: From Depletion Mode to Enhancement Mode

机译：基于氟化物的等离子体处理控制alGaN / GaN HEmT的阈值电压：从耗尽模式到增强模式

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Yong Cai; Yugang Zhou; Kei May Lau; Kevin J. Chen;
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年度 2014
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1. Control of Threshold Voltage of AlGaN/GaN HEMTs by Fluoride-Based Plasma Treatment: From Depletion Mode to Enhancement Mode [J] . Yong Cai, Yugang Zhou, Kei May Lau, IEEE Transactions on Electron Devices . 2006,第9期

机译：基于氟化物的等离子体处理控制AlGaN / GaN HEMT的阈值电压：从耗尽模式到增强模式
2. Monolithically integrated enhancement/depletion-mode AlGaN/GaN HEMTs SRAM unit and voltage level shifter using fluorine plasma treatment [J] . Chen Yonghe, Zheng Xuefeng, Zhang Jincheng, Journal of Semiconductors . 2016,第5期

机译：采用氟等离子体处理的单片集成增强/耗尽模式AlGaN / GaN HEMT SRAM单元和电压电平转换器
3. High-Performance Enhancement-Mode AlGaN/GaN HEMTs Using Fluoride-Based Plasma Treatment [J] . Yong Cai, Yugang Zhou, Kevin J. Chen, IEEE Electron Device Letters . 2005,第7期

机译：采用基于氟的等离子体处理的高性能增强模式AlGaN / GaN HEMT
4. Self-aligned enhancement-mode AlGaN/GaN HEMTs using fluoride-based plasma treatment [C] . Yong Cai, Yugang Zhou, Kevin J. Chen, . 2005

机译：采用氟化物等离子体处理的自对准增强型AlGaN / GaN HEMT
5. Investigation of normally-off mode AlGaN/GaN MOS HEMT device utilizing gate recession and p-GaN gate structure with ald grown high k gate insulators for high power application. [D] . Ma, Jin Seock. 2016

机译：研究常关模式的AlGaN / GaN MOS HEMT器件，该器件利用栅极后退和p-GaN栅极结构以及带有醛生长的高k栅极绝缘体来实现高功率应用。
6. Investigation of Recessed Gate AlGaN/GaN MIS-HEMTs with Double AlGaN Barrier Designs toward an Enhancement-Mode Characteristic [O] . Tian-Li Wu, Shun-Wei Tang, Hong-Jia Jiang 2020

机译：面向增强模式特性的具有双AlGaN势垒设计的嵌入式栅AlGaN / GaN MIS-HEMT研究
7. High Performance Enhancement-Mode AlGaN/GaN MIS-HEMT with Selective Fluorine Treatment [O] . Chao Yang, Jiayun Xiong, Jie Wei, 2015

机译：高性能增强 - 模式AlGaN / GaN MIS-HEMT与选择性氟处理

Control of Threshold Voltage of AlGaN/GaN HEMTs by Fluoride-Based Plasma Treatment: From Depletion Mode to Enhancement Mode

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